- 您现在的位置：买卖IC网 > Sheet目录446 > IRFP150N (International Rectifier)MOSFET N-CH 100V 42A TO-247AC
IRFP150N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
100
–––
–––
–––
0.11
–––
–––
–––
0.036
V
V/°C
?
V GS = 0V, I D = 250μA
Reference to 25°C, I D = 1mA ?
V GS = 10V, I D = 23A ?
––– R G = 3.6 W ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
56
45
40
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 22A ?
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
110 I D = 22A
15 nC V DS = 80V
58 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 50V
––– I D = 22A
ns
––– R D = 2.9 W ? , See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0
13
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1900
450
230
––– V GS = 0V
––– pF V DS = 25V
––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
42
140
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S =23A, V GS = 0V ?
––– 180 270 ns T J = 25°C, I F = 22A
––– 1.2 1.8 μC di/dt = 100A/μs ? ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 1.7mH
W
R G = 25 ? , I AS = 22A. (See Figure 12)
? I SD ≤ 22A, di/dt ≤ 180A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRF1310N data and test conditions.
www.irf.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRFP250
MOSFET N-CH 200V 30A TO-247AD
IRFP260
MOSFET N-CH 200V 46A TO247
IRFP264
MOSFET N-CH 250V 38A TO247
IRFP3703
MOSFET N-CH 30V 210A TO-247AC
IRFP450
MOSFET N-CH 500V 14A TO-247AD
IRFP470
MOSFET N-CH 500V 24A TO-247AD
IRFP9140N
MOSFET P-CH 100V 23A TO-247AC
IRFR010TRPBF
MOSFET N-CH 50V 8.2A DPAK
相关代理商/技术参数
IRFP150N_R4942
功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP150NHR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC
IRFP150NPBF
功能描述:MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP150PBF
功能描述:MOSFET N-Chan 100V 41 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP150PBF
制造商:International Rectifier 功能描述:MOSFET
IRFP150R
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-247
IRFP150R119
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFP150V
制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET